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Design And Application Guide For High Speed MOSFET Gate Drive Circuits
1 o2 t( l6 c5 |5 f* j! t9 WThe main purpose of this paper is to demonstrate a systematic approach to design high peRFormance
& D9 I7 b8 N( }# H' Ogate drive circuits for high speed switching applications. It is an informative collection of topics offering4 p* a8 K. T% C+ w+ j7 t/ i
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to
9 o* S7 p1 y/ a; ^3 lpower electronics engineers at all levels of experience.8 `2 V: f& f+ N5 E% z) d
The most popular circuit solutions and their performance are analyzed, including the effect of parasitic* O$ s; ^) w. t9 G! O- b: n
components, transient and extreme operating conditions. The discussion builds from simple to more+ Z; }' m0 w1 v- ~6 k9 D0 _) d
complex problems starting with an overview of MOSFET technology and switching operation. Design0 Z% C' g \9 m5 K& I l8 ^
procedure for ground referenced and high side gate drive circuits, AC coupLED and transformer isolated
2 c! c$ h, W6 N& X% v% d3 Rsolutions are described in great details. A special chapter deals with the gate drive requirements of the/ l1 O# K. r2 y* ^: f
MOSFETs in synchronous rectifier applications./ X" Q* T( o1 L+ I# Z
Several, step-by-step numerical design examples complement the paper.
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