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Design And Application Guide For High Speed MOSFET Gate Drive Circuits$ J( i! k) U3 A) Y g- | x
The main purpose of this paper is to demonstrate a systematic approach to design high peRFormance5 F2 J3 w! G' H9 y+ D( R
gate drive circuits for high speed switching applications. It is an informative collection of topics offering4 D5 y- p2 a/ Z- ^3 i' Q
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to/ x% [; o, N/ Y( J
power electronics engineers at all levels of experience.
$ [: o5 q: H) { I, V6 s" WThe most popular circuit solutions and their performance are analyzed, including the effect of parasitic( D0 ~7 g& k1 F# q$ B% s
components, transient and extreme operating conditions. The discussion builds from simple to more
2 S; G3 r$ @' A6 h4 ~. Ycomplex problems starting with an overview of MOSFET technology and switching operation. Design% ]% _9 s7 D. ^" j0 `/ Z& {+ j7 p! `
procedure for ground referenced and high side gate drive circuits, AC coupLED and transformer isolated
" c5 M) Q8 c: s) e* N5 z7 Qsolutions are described in great details. A special chapter deals with the gate drive requirements of the1 V/ y: R) R. U r- Q. h& ?0 o9 L
MOSFETs in synchronous rectifier applications. `1 W! X P5 v6 H
Several, step-by-step numerical design examples complement the paper.% l) j, d( m% Z& V# v
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发表于 2022-7-25 09:54
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