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各位大侠
7 A7 o2 {# I9 P3 S8 I" h$ k; L现在碰到一个问题/ A9 G9 }5 {8 U- u
就是ddr2内存接续的问题9 a* t# o. g L$ {
现在系统cpu是三星的32位的s3c2450(ARM9核心),支持ddr,mobile ddr和ddr2, c! Y+ P' J0 E- y9 Y
The S3C2450 Mobile DRAM Controller supports three kinds of memory inteRFace - (Mobile) SDRAM and mobile4 h& e" v1 R9 _
DDR and DDR2. Mobile DRAM controller provides 2 chip select signals (2 memory banks), these are used for up; V% o! S" A$ c7 \0 ]* h
to 2 (mobile) SDRAM banks or 2 mobile DDR banks or 2 DDR2 banks. Mobile DRAM controller can’t support 33 |0 H; t8 v! J: [6 p
kinds of memory interface simultaneous, for example one bank for (mobile) SDRAM and one bank for mobile. P0 `2 B# q% b
DDR.
0 r* N$ z4 j+ _6 v; |7 kDDR2 Features
; J- m5 L g4 y' M: _. I6 g _' N− Support DDR2 having 4-bank architecture, don’t support 8-bank architecture.
1 R. o* r: b( I" }8 v− Support 16-bit external data bus interface( q n. m$ J6 j
− Support AL(Additive Latency) 0, don’t support posted CAS, it needs EMRS setting.
7 h7 x6 a* ?7 _6 E8 ?* w9 @− Don’t support ODT and nDQS function, it needs EMRS setting.
. V( v9 T$ i5 w4 b− All other features are same to the features of SDR/mDDR9 T2 m4 g0 K; }8 Z
! v' x! m: g/ F, W- M7 R4 w但是我看他们接续的时候
. F' {7 `) v( K" W接续了两个ddr2 (32M*16),而内存上只有十六位数据线
6 [2 F w: K+ B" Z& t) h于是他们就将两个内存芯片的数据线分为高十六位和低十六位) j& W: O6 K" D& Y; I1 X3 ?
6 n/ t) q; `. O) M6 u/ |我的问题就是; { w& c6 a& O. l
1,要是接两个内存芯片的话必须这么接么?这么接有什么好处?
! ?$ \ |6 [8 u: n& \ @7 [' r" }& b2,要是接两个芯片的话可不可以将两个芯片的数据线都接续到一起?9 e$ U( ?6 M& P5 ?
3,我现在是用了两个ddr2 (32M*16),但是我要是用一个ddr2 (64M*16)的话这两种方式谁更快一点,原因?7 o( W# j @, V( L
4,现在内存标称频率还有待于选择,比如说我现在可以用ddr2 667的内存,也可以用ddr2 533的内存,要是都工作在533MHz的话' }0 z5 Y. i4 b* Q8 F$ v$ V' v3 ? O
ddr2 667的电磁干扰(EMI)会不会更大一点啊? |
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