4 V$ T0 s4 m; c% B' D6 q3 L是的,官方推荐图里面也是驱动双NMOSFET。& Y: n w. Y$ E* H
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. 7 V6 f$ D: R- T, [' i - ?) M; P' ?4 Q2 Q _( X1 k* |0 J5 J
其次,楼主的原理图的/SD引脚错误的接到GND了,应该接高电平。 ; b( [4 y L5 b/ M$ S 3 c* u& w: L( }" R) e/ L- e# \/ ? 5 d7 x3 d( E; f' [0 M+ k8 y