& M) l$ H" ~- q# D! C |
是的,官方推荐图里面也是驱动双NMOSFET。) G# k# K. @4 b/ ?# p
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. ( V# H1 f/ Q5 z6 S, ^ # X4 }8 L2 u& T9 ^/ E8 W I4 }* r. i
其次,楼主的原理图的/SD引脚错误的接到GND了,应该接高电平。1 o7 ]/ L% [- d
+ P P7 ^) q- _, t; X4 I0 l. V8 j 4 U6 j1 C. C3 N2 j5 Z