Matlab电子电路分析（第三卷）

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Matlab电子电路分析（第三卷）

CHAPTER TEN
4 A1 f8 s) r  m1 G# P3 q5 D$ m" i0 ]SEMICONDUCTOR PHYSICS
In this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon
2 \' D$ I' e% r7 }ductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with
* A" V1 _" x. ]. z0 @1 NMATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
: o- |1 `& t- F' i$ L+ z10.1 INTRINSIC SEMICONDUCTORS
/ E* U4 w2 l" C10.1.1 Energy bands
, H7 d* x" Q) M2 HAccording to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons
surround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the
& g9 _( m- l" H9 ~- Qform of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for
8 ]1 H+ z3 U# X% u9 aa direct band gap semiconductor.
7 {3 c; J% H0 |& }7 MThe energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy
, ]$ l; W1 L2 J0 [- V# Wband (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.
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1 A5 r8 H7 g! D. r1 Y[size=9.96001pt]
0 w1 F6 R8 o$ T. \8 c; `# u
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