Matlab电子电路分析（第三卷）

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Matlab电子电路分析（第三卷）

/ G0 ~- G; E/ h  R: {1 ?CHAPTER TEN
, F6 i  j0 I) L- ySEMICONDUCTOR PHYSICS
% X; Y: B$ o# A+ x" R7 v. y: ]+ kIn this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon
8 h) r" U. j/ z- ~' ?ductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with
MATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
10.1 INTRINSIC SEMICONDUCTORS
/ U2 x, ~/ f+ g10.1.1 Energy bands
. U! f' T6 h. N8 J) ~According to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons
$ F0 p& ~' x. i* W9 x  T  nsurround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the
form of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for
- d5 }1 M- }1 T1 L% N  b& Ka direct band gap semiconductor.
The energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy
! r( G: z  K9 U$ G& O4 ~band (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.
( F3 X2 e' u: G4 y3 D+ n$ D% G- d! X
! q# s$ }& i6 e& H+ E[size=9.96001pt]
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6 Y# J# }( N5 ]3 }% F

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