铁电存储IC擦写次数

QWE4562009

铁电存储IC擦写次数
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铁电存储IC擦写次数达到了10的10次方次，也就是10亿次。这个比一般的EEPROM优势明显，比如AT24CXX，一般都是10万次。但是MB85RC16PNF-G-JNERE1为啥SOP8那么大的封装，铁电的容量才2KB也就是16Kb，那么小的容量？这是材料局限决定的吗？有谁知道的？科普一下

huo_xing

你说的大是指封装，不是晶圆。这两个没有必然联系

超級狗

偉雞百科的解釋
9 z) c" ?; Q" D; a( G! wAn additional limitation on size is that materials tend to stop being ferroelectric when they are too small. (This effect is related to the ferroelectric's "depolarization field".) There is ongoing research on addressing the problem of stabilizing ferroelectric materials; one approach, for example, uses molecular adsorbates.

To date, the commercial FeRAM devices have been produced at 350 nm and 130 nm. Early models required two FeRAM cells per bit, leading to very low densities, but this limitation has since been removed.
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超級狗

. F& k# }. G* A/ h* }4 t4 L2 S日寇東芝半導體（Toshiba）ˊ2009 年說，他們能做到 128M bit。
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