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也请教一下yuxuan51版主~~
: u! M, z3 [$ W$ K最大电流是根据芯片datasheet中的IDD计算的么？貌似很难找到计算目标阻抗的实例啊。。我列举点数据，能不能教大家算一下？
, P' b" n" l# P, g! xDDR3 DRAM datasheet 中' ?! A6 Y1 f$ H7 T, V5 D9 R
Parameter Symbol Max
0 D3 l: u+ n- @" jOperating current (ACT-PRE) IDD0 65MA) p- ~" { {6 s
Operating current (ACT-READ-PRE) IDD1 80MA
9 d$ D' x8 u( |/ E9 l5 x6 |+ d& EPrecharge power-down standby current IDD2 35MA8 z, Y k& U6 G$ y
Precharge standby current IDD2N 45MA2 G3 K9 _1 d6 j! ~0 j8 K# U' o5 o
Precharge standby ODT current IDD2NT 45MA
( a! E- U+ v) N: ?Precharge quiet standby current IDD2Q 45MA
, ]9 {6 U' ?4 t$ g/ m) |4 gActive power-down current(Always fast exit) IDD3P 39MA( }) \. A4 ^' A/ [1 l
Active standby current IDD3N 55MA
5 w4 H& Y$ _) Q6 G4 L6 c& rOperating current (Burst read operating) IDD4R 125MA9 Q1 X& p1 u. n( B+ P5 c8 w/ K
Operating current (Burst write operating) IDD4W 130MA
- I% N5 |8 T5 b$ r# c. b5 z% qBurst refresh current IDD5B 250MA* l' ~# B5 G: t5 W3 y f
All bank interleave read current IDD7 210MA
- n0 m X" ], |, ~5 s: ^0 f2 R最大电流按250mA * 0.5 算？？
- c+ @* r4 K$ |1 V( S6 b另外，一条板子需要8个DRAM颗粒，这样的话是不是电流还要乘以8？; A. N7 R& s3 v9 b
先谢谢~ |
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发表于 2012-5-4 08:37
发表于 2012-5-4 09:02
