節錄自 EE Times︰ 5 n' v1 p9 W# j$ C& n7 v* bThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency.& p+ h. `. I0 g6 y' h2 U