節錄自 EE Times︰" B8 H. g$ d5 j
The DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. / u; z3 X$ ?' _/ ^5 f. h" V9 I7 i$ Q" T) X. l