節錄自 EE Times︰/ F; v3 i* K) ^; t8 J
The DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency." ]8 }3 q+ c7 }3 t2 M: w7 v* W
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发表于 2016-9-12 15:48
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发表于 2016-9-12 18:42
